Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of producing an SOI structure with an insulating layer of controlled thickness

Method of producing an SOI structure with an insulating layer of controlled thickness

US Patent 8241998 · Granted Aug 14, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for self-supported transfer of a fine layer by pulsation after implantati2012
Method of treating interface defects in a substrate2010
Method of catastrophic transfer of a thin film after co-implantation2010
Photodetecting device2010
Method of manufacturing a silicon dioxide layer2010
Method of fabricating a semiconductor hetero-structure2009
Method of manufacturing a wafer2009
Film taking-off method2009
Photodetecting device2008
Method of manufacturing a wafer2008
Method for transferring a thin layer including a controlled disturbance of a cry2008
Method of detaching a thin film at moderate temperature after co-implantation2007