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Home › Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells

Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells

US Patent 8222102 · Granted Jul 17, 2012

Estimated economic value: $3,261,000 ⓘ

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