Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator

Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator

US Patent 8173526 · Granted May 8, 2012

Estimated economic value: $16,436,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Carrier-bonding methods and articles for semiconductor and interposer processing2019
Vapor deposition systems and processes for the protection of glass sheets2018
Glass articles and methods for controlled bonding of glass sheets with carriers2018
Structure for transistor switching speed improvement utilizing polar elastomers2018
Methods for processing electronic devices2018
Articles with anti-reflective high-hardness coatings and related methods2017
Method of cleaning glass substrates2017
Integrated circuit structures containing a strain-compensated compound semicondu2015
Integrated circuit structures containing a strain-compensated compound semicondu2013
Method and system for providing a metal oxide semiconductor device having a drif2013
Ex-situ component recovery2013
Ex-situ component recovery2011