Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Metal-oxide-semiconductor device having trenched diffusion region and method of forming same

Metal-oxide-semiconductor device having trenched diffusion region and method of forming same

US Patent 8153484 · Granted Apr 10, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Enhanced radio frequency switch and fabrication methods thereof2025
Virtual keyboard for inputting Chinese characters and configuring method thereof2024
Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency2024
Schottky power mosfet2023
Metal-oxide semiconductor for field-effect transistor having enhanced high-frequ2021
Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency2021
Lossless switch for radio frequency front-end module2020
Protection circuits with negative gate swing capability2020
Schottky power MOSFET2020
Enhanced thermal transfer in a semiconductor structure2020
Integrated on-chip junction capacitor for power management integrated circuit de2019
Enhanced thermal transfer in a semiconductor structure2019