Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device

Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device

US Patent 8148178 · Granted Apr 3, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Immunoassay device and immunoassay method2025
Fire extinguishing agent composition and fire extinguisher for electric vehicles2025
Ultraviolet light emitting element and light emitting element package including 2025
Nitride-based multi-wavelength light emitting diode system and control method th2025
Semiconductor device with an arrangement of recesses for receiving electrodes2024
Semiconductor device2024
Semiconductor device having recesses forming areas2024
Light emitting semiconductor device for enhancing light extraction efficiency2024
Polyester sound absorption material, method of manufacturing molded product usin2024
Ultraviolet light emitting element and light emitting element package including 2023
Semiconductor device2023
Light emitting semiconductor device2023