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Home › Method of fabricating an amorphous zinc-oxide based thin film transistor (TFT) including source/drain electrodes formed between two oxide semiconductor layers

Method of fabricating an amorphous zinc-oxide based thin film transistor (TFT) including source/drain electrodes formed between two oxide semiconductor layers

US Patent 8058116 · Granted Nov 15, 2011

Estimated economic value: $82,000 ⓘ

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