{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Methods of forming power switching semiconductor devices including rectifying junction-shunts", "item": "https://www.patentleaderboard.com/patent/8034688"}]}
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Home › Methods of forming power switching semiconductor devices including rectifying junction-shunts

Methods of forming power switching semiconductor devices including rectifying junction-shunts

US Patent 8034688 · Granted Oct 11, 2011

Estimated economic value: $7,604,000 ⓘ

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