Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating trench-constrained isolation diffusion for semiconductor devices

Method of fabricating trench-constrained isolation diffusion for semiconductor devices

US Patent 8030152 · Granted Oct 4, 2011

Estimated economic value: $1,504,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Schottky device and method of manufacturing the same2025
Distributed photobiomodulation therapy system with intelligent LED pad2025
Systems and methods for enhanced organizational transparency using a credit chai2025
Distributed photobiomodulation therapy system and method2024
Semiconductor device with embedded Schottky diode and manufacturing method there2024
Methods and apparatus for HyperSecure last mile communication2024
Semiconductor device with temperature sensing component2024
Decentralized cybersecure privacy network for cloud communication, computing and2023
Methods and apparatus for HyperSecure last mile communication2023
Augmented cognition methods and apparatus for contemporaneous feedback in psycho2023
Methods and apparatus for HyperSecure last mile communication2023
Systems and methods for enhanced organizational transparency using a credit chai2023