Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps

Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps

US Patent 8008647 · Granted Aug 30, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-volatile memory device with high voltage region and low voltage region2025
Laser-assisted bonding apparatus for bonding an electronic device to a substrate2025
Display panel of a programmed computer system with a graphical user interface2025
Deposition device having contact structure and deposition system having same2025
Electronic parking brake system2025
Storage devices, methods of operating storage devices, and streaming systems inc2025
Organic light emitting display device2024
Computational storage device, storage system including the same and operation me2024
Method and apparatus for controlling reactor in reformer2024
Method of controlling wafer bow in a type III-V semiconductor device2024
Apparatus and method for automatic generation of machine reading comprehension t2024
Apparatus and method for providing indexing and search service based on importan2024