Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure made using improved simultaneous multiple ion implantation process

Semiconductor structure made using improved simultaneous multiple ion implantation process

US Patent 8008175 · Granted Aug 30, 2011

Estimated economic value: $15,545,000 ⓘ

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Isothermal ion source with auxiliary heaters2025
Ion production system with efficient ion collection2025
Ion production system with fibrous lattice for ion collection2024
Thin glass based article with high resistance to contact damage2020
Semiconductor structure made using improved multiple ion implantation process2014
Semiconductor structure made using improved pseudo-simultaneous multiple ion imp2013
Methods and apparatus for producing semiconductor on insulator structures using 2012
Semiconductor structure made using improved multiple ion implantation process2012
Methods and apparatus for producing semiconductor on insulator structures using 2011
Methods and apparatus for producing semiconductor on insulator structures using 2011
Methods and apparatus for producing semiconductor on insulator structures using 2010