Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming semiconductor devices with active silicon height variation

Method for forming semiconductor devices with active silicon height variation

US Patent 8003459 · Granted Aug 23, 2011

Estimated economic value: $5,509,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Managing metadata for external content within a computing environment2025
Managing multi-tenant keys in multi-tenant computing environments2025
Gas turbine engine2024
Wrap-around contact on FinFET2023
Gas turbine engine2023
Gas turbine engine2023
Gas turbine engine control system and method for limiting turbine overspeed in c2022
Wrap-around contact on FinFET2022
Managing metadata for external content within a computing environment2022
Semiconductor devices, FinFET devices, and manufacturing methods thereof2022
Semiconductor packages having dummy connectors and methods of forming same2020
Method of forming the gate electrode of field effect transistor2020