Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a group III nitride material on a silicon substrate

Method for forming a group III nitride material on a silicon substrate

US Patent 7989925 · Granted Aug 2, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Display panel with gallium nitride-based light emitting diode units with display2025
Semiconductor structures and manufacturing methods thereof2025
Method of manufacturing a semiconductor structure, which can be applied to full-2025
Resonant tunneling diodes and manufacturing methods thereof2025
Substrate stripping method for semiconductor structure by irradiating AlGaN2025
GaN-based semiconductor structures2025
Semiconductor structure and preparation method therefor2025
Enhancement-type semiconductor structure and manufacturing method thereof2025
LED devices, LED structures and manufacturing methods thereof2025
Semiconductor structure with diffusion blocking layer and preparing method for s2025
GaN-based semiconductor structures2025
Semiconductor structure and substrate thereof, and manufacturing methods for sem2025