Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method

Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method

US Patent 7960781 · Granted Jun 14, 2011

Estimated economic value: $13,623,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for suppressing voltage overshoots2025
Dielectric lattice with passive component circuits2023
Dielectric lattice with capacitor and shield structures2023
Power device having super junction and Schottky diode2023
Electronic device including a charge storage component2023
Trench gate transistors with low-resistance shield and gate interconnects2023
Electronic device including doped regions and a trench between the doped regions2022
Electronic device including a drift region2021
Power device having super junction and schottky diode2020
Electronic device including a dielectric layer having a non-uniform thickness2020
Electronic device including a transistor structure having different semiconducto2019
Electronic device including a termination structure2019