Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof

Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof

US Patent 7944022 · Granted May 17, 2011

Estimated economic value: $117,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2020
Semiconductor device2020
Image capture apparatus and method of controlling the same2019
Lead acid battery2019
Image pickup apparatus and method of controlling the same2019
Safety control device and safety control system2019
Image processing apparatus to encode image data by image processing parameters2018
Ink jet recording method, photocurable ink jet ink composition, and ink jet reco2017
Ink composition for ink jet recording and ink jet recording method2016
Storage medium having stored therein communication program, information processi2016
Semiconductor device2016
Ink jet recording method, photocurable ink jet ink composition, and ink jet reco2015