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Home › Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same

Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same

US Patent 7939895 · Granted May 10, 2011

Estimated economic value: $369,000 ⓘ

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