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Home › Methods of forming a field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells

Methods of forming a field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells

US Patent 7939403 · Granted May 10, 2011

Estimated economic value: $4,804,000 ⓘ

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