Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating a semiconductor on insulator device having a frontside substrate contact

Method of fabricating a semiconductor on insulator device having a frontside substrate contact

US Patent 7932560 · Granted Apr 26, 2011

Estimated economic value: $10,223,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Manufacturing a MEMS element having cantilever and cavity on a substrate2012
Fuse structure for maintaining passivation integrity2010
Method of manufacturing a semiconductor device using a chemical vapour depositio1995