Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › System and method for providing a self aligned bipolar transistor using a silicon nitride ring

System and method for providing a self aligned bipolar transistor using a silicon nitride ring

US Patent 7927958 · Granted Apr 19, 2011

Estimated economic value: $16,915,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduced silicon dislocation defects from deep SI trench integration2025
Power supply system and topology detection method2025
Deep trench isolation with field oxide2024
Method and system for implementing L3VPN based on two-dimensional routing protoc2023
Trench DMOS transistor with reduced gate-to-drain capacitance2020
Trench DMOS transistor with reduced gate-to-drain capacitance2017
Low frequency CMUT with vent holes2014
Integration of structurally-stable isolated capacitive micromachined ultrasonic 2013
High frequency CMUT2013
Low frequency CMUT with thick oxide2013
Low frequency CMUT with vent holes2013
Method of forming a capacitive micromachined ultrasonic transducer (CMUT)2012