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Home › System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture

System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture

US Patent 7846806 · Granted Dec 7, 2010

Estimated economic value: $4,443,000 ⓘ

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