Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a split gate non-volatile memory cell

Method of forming a split gate non-volatile memory cell

US Patent 7838363 · Granted Nov 23, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Rough MEMS surface2018
Reducing MEMS stiction by deposition of nanoclusters2017
Bonded wafer structure having cavities with low pressure and method for forming2017
Reducing MEMS stiction by increasing surface roughness2017
Reducing MEMS stiction by introduction of a carbon barrier2016
MEMS fabrication process with two cavities operating at different pressures2016
Systems and methods for anchoring components in MEMS semiconductor devices2016
Method of bond pad protection during wafer processing2016
Reducing MEMS stiction by deposition of nanoclusters2016
Glass frit wafer bond protective structure2016
Methods for bonding semiconductor wafers2016
Reducing MEMS stiction by deposition of nanoclusters2016