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Home › EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well

EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well

US Patent 7835184 · Granted Nov 16, 2010

Estimated economic value: $12,698,000 ⓘ

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