Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025

Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses

US Patent 7830940 · Granted Nov 9, 2010

Assignee

Inventors

View full patent text on Google Patents →