Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating semiconductor device having gate spacer layer with uniform thickness

Method of fabricating semiconductor device having gate spacer layer with uniform thickness

US Patent 7824975 · Granted Nov 2, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method for fabricating the same2022
Stabilized pharmaceutical composition containing pemetrexed or pharmaceutically 2020
Semiconductor device and method for fabricating the same2020
Semiconductor device with air gaps and method for fabricating the same2015
Method for implanting ions in semiconductor device2015
Semiconductor device with air gaps and method for fabricating the same2014
MOS transistor suppressing short channel effect and method of fabricating the sa2014
Method for manufacturing a transistor for preventing or reducing short channel e2014
Phase change memory device and fabrication method thereof2013
Methods of manufacturing phase-change memory device and semiconductor device2013
Non-uniform ion implantation apparatus and method thereof2013
Method of fabricating a landing plug in a semiconductor device2012