Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same

Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same

US Patent 7816244 · Granted Oct 19, 2010

Estimated economic value: $101,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Paper sheet processing device2022
Catalyst for hydrocarbon catalytic cracking2017
Method for fabricating semiconductor device and plasma doping apparatus2013
Plasma doping method2012
Semiconductor device having a field effect transistor using a high dielectric co2011
Apparatus for fabricating coating and method of fabricating the coating2010
Semiconductor device having a field effect transistor using a high dielectric co2009
Insulating buffer film and high dielectric constant semiconductor device and met2009
Insulating buffer film and high dielectric constant semiconductor device and met2009
Method for fabricating semiconductor device2009
Semiconductor device and method for fabricating the same2008
Magnetic recording medium including a diamond-like carbon protective film and at2008