Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure of LiAlO2 substrate having ZnO buffer layer

Structure of LiAlO2 substrate having ZnO buffer layer

US Patent 7812526 · Granted Oct 12, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing silicon ingot single crystal2024
Buffer layer structure to improve gan semiconductors2024
Method for producing Si ingot single crystal, Si ingot single crystal, and appar2024
Apparatus for producing Si ingot single crystal2024
Semiconductor device2024
Material analysis method2024
Mono-crystalline silicon growth apparatus2023
Buffer layer structure to improve GaN semiconductors2023
Method of manufacturing epitaxy substrate2023
Epitaxy substrate and method of manufacturing the same2022
Mono-crystalline silicon growth method2022
Mono-crystalline silicon growth apparatus2022