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Home › Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture

Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture

US Patent 7800173 · Granted Sep 21, 2010

Estimated economic value: $2,118,000 ⓘ

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