Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon

Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon

US Patent 7741214 · Granted Jun 22, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vibration control system2025
Vibration control system2024
Semiconductor device and method of manufacturing semiconductor device2019
Method of manufacturing semiconductor device with a multi-layered gate dielectri2018
Semiconductor memory device having memory cells provided in a height direction2017
Semiconductor memory device2017
Semiconductor device and a method for manufacturing a semiconductor device2017
Semiconductor device with varying thickness of insulating film between electrode2017
Semiconductor memory device and method of manufacturing the same2016
Semiconductor device2016
Semiconductor device and a method for manufacturing a semiconductor device2016
Semiconductor device with high reliability and manufacturing method thereof2015