Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current

Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current

US Patent 7704892 · Granted Apr 27, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Apparatus and method with image processing2025
Single image sensor for restoring images corresponding to various fields of view2025
Method of manufacturing a semiconductor device having a node capping pattern and2025
Semiconductor devices and methods of forming the same2024
Semiconductor device having a node capping pattern and a gate capping pattern2023
Integrated circuit device and method of fabricating the same2023
Semiconductor devices including contact plugs2023
Integrated circuit device and method of fabricating the same2022
Semiconductor devices and methods of forming the same2021
Reflection system2020
Integrated circuit device and method of fabricating the same2020
Semiconductor devices including contact plugs2020