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Home › Negative N-epi biasing sensing and high side gate driver output spurious turn-on prevention due to N-epi P-sub diode conduction during N-epi negative transient voltage

Negative N-epi biasing sensing and high side gate driver output spurious turn-on prevention due to N-epi P-sub diode conduction during N-epi negative transient voltage

US Patent 7671638 · Granted Mar 2, 2010

Estimated economic value: $4,095,000 ⓘ

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