Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element

Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element

US Patent 7638789 · Granted Dec 29, 2009

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cumulative inertial tractive effort2017
Method for forming a lateral phase change memory element2013
Sawdust/pellets/waste stove or dryer2012
Forming phase change memories with a breakdown layer sandwiched by phase change 2011
Programming a normally single phase chalcogenide material for use as a memory of2011
Forming an intermediate electrode between an ovonic threshold switch and a chalc2009
Method and apparatus for driving an electronic load2008
Programming a normally single phase chalcogenide material for use as a memory or2008
Microencapsulated animal trap bait and method of luring animals to traps with mi2006
Automation control with improved operator/system interface1994
Automation control with improved operator/system interface1993
Sonar system with area moving target indicator1989