Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with T-shaped gate electrode and hollow region adjacent the gate electrode

Semiconductor device with T-shaped gate electrode and hollow region adjacent the gate electrode

US Patent 7622767 · Granted Nov 24, 2009

Estimated economic value: $227,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field effect transistor2022
Semiconductor device, high-frequency power amplifier, and method of manufacturin2021
Semiconductor device2019
Semiconductor device2018
Semiconductor device2017
Field effect transistor2017
Method for manufacturing semiconductor device2016
Semiconductor device with improved conductivity2015
Semiconductor device2014
Semiconductor device2013
Semiconductor device2012
Semiconductor device2011