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Home › Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics

Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics

US Patent 7595244 · Granted Sep 29, 2009

Estimated economic value: $7,258,000 ⓘ

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