Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices

Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices

US Patent 7579897 · Granted Aug 25, 2009

Estimated economic value: $21,245,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Latch device and operation method thereof2023
Latch device and operation method thereof2023
Delay looked loop circuit and method of measuring delay2022
Testing integrated circuit designs containing multiple phase rotators2021
Testing integrated circuit designs containing multiple phase rotators2020
Testing integrated circuit designs containing multiple phase rotators2020
Testing integrated circuit designs containing multiple phase rotators2018
Extraction of resistance associated with laterally diffused dopant profiles in C2017
Partially dielectric isolated fin-shaped field effect transistor (FinFET)2017
Partially dielectric isolated fin-shaped field effect transistor (FinFET)2017
Multi-layered integrated circuit with selective temperature coefficient of resis2016
Junctionless tunnel FET with metal-insulator transition material2016