Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Device and method for limiting Di/Dt caused by a switching FET of an inductive switching circuit

Device and method for limiting Di/Dt caused by a switching FET of an inductive switching circuit

US Patent 7564292 · Granted Jul 21, 2009

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with multiple independent gates2023
Semiconductor device with multiple independent gates2022
Devices and methods for driving a semiconductor switching device2020
Device and associated semiconductor package for limiting drain-source voltage of2014
Device and method for limiting drain-source voltage of transformer-coupled push 2012
Stacked dual MOSFET package2012
Device and method for limiting Di/Dt caused by a switching FET of an inductive s2011
Device and method for limiting drain-source voltage of transformer-coupled push 2011
Circuit and method for controlling the secondary FET of transformer coupled sync2011
Thermally stable semiconductor power device2010
Circuit configuration and method to reduce ringing in the semiconductor power sw2009
Stacked dual MOSFET package2009