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Home › SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same

SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same

US Patent 7479306 · Granted Jan 20, 2009

Estimated economic value: $5,212,000 ⓘ

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