Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low temperature process and structures for polycide power MOSFET with ultra-shallow source

Low temperature process and structures for polycide power MOSFET with ultra-shallow source

US Patent 7473604 · Granted Jan 6, 2009

Estimated economic value: $6,322,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Drive belts including foamed undercord layers and methods of manufacturing the s2025
Drive belts including foamed undercord layers and methods of manufacturing the s2025
Self-aligning power transmission belts and systems incorporating the same2025
Optimizing belt and wheel systems2024
High-efficiency belt and method of manufacturing the same2024
Reinforcement layer2023
High-efficiency belt and method of manufacturing the same2021
Pressure hose2021
Short channel trench power MOSFET with low threshold voltage2010
Current sense trench type MOSFET with improved accuracy and ESD withstand capabi2009
Trench MOSFET technology for DC-DC converter applications2009
Enhancement mode GaN FET with piezoelectric gate2009