Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High current interconnect structure for IC memory device programming

High current interconnect structure for IC memory device programming

US Patent 7471539 · Granted Dec 30, 2008

Estimated economic value: $18,519,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conductive line-based temperature-sensing device2021
Device signature generation2020
Active atomic reservoir for enhancing electromigration reliability in integrated2017
Phase change memory device and method of manufacture thereof2012
Device and method of programming a magnetic memory element2012
Method for forming a reduced active area in a phase change memory structure2012
Compact universal keyboard2012
Spin torque transfer MRAM device2012
Phase change memory devices with reduced programming current2011
Electrostatic discharge protection pattern for high voltage applications2011
Phase change memory2011
Semiconductor device with semi-insulating substrate portions2011