Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors

Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors

US Patent 7466522 · Granted Dec 16, 2008

Estimated economic value: $103,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Precessional spin current structure with non-magnetic insertion layer for MRAM2024
Method for manufacturing a magnetic random-access memory device using post pilla2024
Multi terminal device stack systems and methods2024
High retention storage layer using ultra-low RA MgO process in perpendicular mag2024
Magnetic tunnel junction element with RU hard mask for use in magnetic random-ac2023
Multi terminal device stack formation methods2023
Multi terminal device stack systems and methods2023
High density spin orbit torque magnetic random access memory2023
Methods of manufacture precessional spin current magnetic tunnel junction device2023
Precessional spin current structure for MRAM2022
Magnetic memory chip having nvm class and SRAM class MRAM elements on the same c2022
Magnetic tunnel junction element with Ru hard mask for use in magnetic random-ac2022