Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with integrated trench lateral power MOSFETs and planar devices

Semiconductor device with integrated trench lateral power MOSFETs and planar devices

US Patent 7365392 · Granted Apr 29, 2008

Estimated economic value: $551,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Method for adjusting groove depth and method for manufacturing semiconductor dev2024
Silicon carbide semiconductor device and method of manufacturing silicon carbide2022
Method of manufacturing silicon carbide semiconductor device2020
Method of manufacturing silicon carbide semiconductor device2020
Semiconductor device2019
Semiconductor device and manufacturing method of the same2019
Process for making silicon carbide semiconductor device2019
Silicon carbide semiconductor device and method of manufacturing silicon carbide2019
Silicon carbide semiconductor device and method of manufacturing silicon carbide2019
Semiconductor device2019
Silicon carbide semiconductor device having stacked epitaxial layers2018