Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

US Patent 7355200 · Granted Apr 8, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-luminescent security element and value or security product containing said2024
Multi-luminescent security element and value or security product containing said2022
Ion-sensitive structure and method for producing the same2019
Ion-sensitive structure and method for producing the same2019
Zinc sulphide phosphor having photo- and electroluminescent properties, process 2017
Ion-sensitive layer structure for an ion-sensitive sensor and method for manufac2016
Ion-sensitive layer structure for an ion-sensitive sensor and method for manufac2016
Method and device for individual holographic drum exposure2014
Method and device for producing colored individualized holograms2014
Ion-sensitive sensor with multilayer construction in the sensitive region2013
Ion-sensitive sensor with multilayer construction in the sensitive region2013
Protective structure for semiconductor sensors2010