Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions

Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions

US Patent 7323367 · Granted Jan 29, 2008

Estimated economic value: $9,404,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Body-bias voltage routing structures2020
Closed loop feedback control of integrated circuits2019
Body-bias voltage routing structures2018
Frequency specific closed loop feedback control of integrated circuits2017
Body-bias voltage routing structures2016
Closed loop feedback control of integrated circuits2016
Selective coupling of voltage feeds for body bias voltage in an integrated circu2016
Systems and methods for adjusting threshold voltage2015
Dynamic chip control2015
Software controlled transistor body bias2014
Systems and methods for integrated circuits comprising multiple body biasing dom2014
Structure for spanning gap in body-bias voltage routing structure2014