Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhanced nitride layers for metal oxide semiconductors

Enhanced nitride layers for metal oxide semiconductors

US Patent 7314836 · Granted Jan 1, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for validating critical paths of integrated circuits2025
Wrap-around trench contact structure and methods of fabrication2025
Gate-all-around integrated circuit structures having devices with channel-to-sub2025
Fabrication of gate-all-around integrated circuit structures having pre-spacer d2025
Integrated circuit structures having metal gates with tapered plugs2025
Trench plug hardmask for advanced integrated circuit structure fabrication2025
Gate-all-around integrated circuit structures having uniform threshold voltages 2025
Fabrication of gate-all-around integrated circuit structures having additive met2025
Gate-all-around integrated circuit structures having devices with source/drain-t2025
Pattern decomposition lithography techniques2025
Gate-all-around integrated circuit structures having adjacent structures for sub2025
Self-aligned contacts2025