Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell

Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell

US Patent 7312114 · Granted Dec 25, 2007

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuits, micromechanical devices, and method of making same2011
Deposition method for a transition-metal-containing dielectric2010
Method of producing a conductive layer including two metal nitrides2009
Stacked capacitor and method for producing stacked capacitors for dynamic memory2008
Method for fabricating a capacitor2008
Method for fabricating trench capacitor with insulation collar electrically conn2007
Method for fabricating a trench structure which is electrically connected to a s2007
Selective etching to increase trench surface area2007
Trench capacitor with buried strap2007
Barrier layer and a method for suppressing diffusion processes during the produc2007
Method for expanding a trench in a semiconductor structure2007
Method of making encapsulated spacers in vertical pass gate DRAM and damascene l2005