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Home › Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device

Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device

US Patent 7220314 · Granted May 22, 2007

Estimated economic value: $594,000 ⓘ

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