Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

US Patent 7208770 · Granted Apr 24, 2007

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Architecture for light emitting elements in a light field display2025
High density pixel arrays for auto-viewed 3D displays2025
Photonic integrated circuit including compact lasers with extended tunability2025
Monolithic integration of different light emitting structures on a same substrat2025
Methods of producing removable oral devices2024
Removable oral devices for use in weight management and other applications2024
Optical modules having an improved optical signal to noise ratio2024
Combination of strain management layers for light emitting elements2024
Light-emitting diodes with integrated optical elements2023
Light-emitting diodes with integrated optical elements2023
Light emitting diode containing oxidized metal contacts2023
Architecture for light emitting elements in a light field display2023