Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MRAM-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference

MRAM-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference

US Patent 7206220 · Granted Apr 17, 2007

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Voltage control circuit for phase change memory2013
Current re-routing scheme for serial-programmed MRAM2011
Current re-routing scheme for serial-programmed MRAM2011
Non-volatile static memory cell2010
Non-volatile static memory cell2010
Method and circuit arrangement for memory error processing2007
Method and circuit arrangement for memory error processing2007
Magnetoresistive memory cell array and MRAM memory comprising such array2006
Magnetoresistive memory cell array and MRAM memory comprising such array2006
Device and method to read a 2-transistor flash memory cell2005
Device and method to read a 2-transistor flash memory cell2005
Data processing circuit with non-volatile memory and error correction circuitry2002