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Home › SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer

SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer

US Patent 7166521 · Granted Jan 23, 2007

Estimated economic value: $10,875,000 ⓘ

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