Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide

Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide

US Patent 7138292 · Granted Nov 21, 2006

Estimated economic value: $8,681,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Full-chip assessment of time-dependent dielectric breakdown2018
Leakage reduction using stress-enhancing filler cells2017
Chip-scale electrothermal analysis2017
Determination of electromigration susceptibility based on hydrostatic stress ana2015
Method characterizing materials for a trench isolation structure having low tren2011
Method for determining via/contact pattern density effect in via/contact etch ra2010
Shallow trench isolation structure with low trench parasitic capacitance2009
Strained-silicon for CMOS device using amorphous silicon deposition or silicon e2008
Apparatus and method of manufacture for integrated circuit and CMOS device inclu2008
Apparatus and method of manufacture for integrated circuit and CMOS device inclu2008
Method for incorporating germanium into a semiconductor wafer2007
Method for implanting ions in a semiconductor2006