Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic random access memory array with global write lines

Magnetic random access memory array with global write lines

US Patent 7136298 · Granted Nov 14, 2006

Estimated economic value: $14,561,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device with propagation circuitry in each sub-array and method thereof2011
Accessing data within a memory formed of memory banks2011
Read only memory cell for storing a multiple bit value2011
Data processing apparatus and method for testing stability of memory cells in a 2010
Power control circuitry and method2010
Memory device and method of operating such a memory device2009
Magnetic random access memory array having bit/word lines for shared write selec2008
Random access memory cell of reduced size and complexity2007
Multi-bit magnetic random access memory element2007
Magnetic random access memory array having bit/word lines for shared write selec2007
Memory architecture with segmented writing lines2006
Random access memory array with parity bit structure2006