Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices

Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices

US Patent 7126167 · Granted Oct 24, 2006

Estimated economic value: $4,161,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Split-gate trench MOS transistor with self-alignment of gate and body regions2025
Soft start for Buck converter2025
Vertical conduction electronic power device having a reduced on resistance and m2024
Trench-gate field effect transistor with improved electrical performances and co2024
Semiconductor die with improved thermal insulation between a power portion and a2024
Integrated MOS transistor with selective disabling of cells thereof2023
Trench-gate field effect transistor with improved electrical performances and co2023
HEMT power device operating in enhancement mode and manufacturing process thereo2023
Power MOS device having an integrated current sensor and manufacturing process t2023
High-voltage capacitor, system including the capacitor and method for manufactur2023
Semiconductor die with improved thermal insulation between a power portion and a2023
High electron mobility transistor (HEMT) devices and methods2023